BUX85G

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Mfr.Part #
BUX85G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 2A TO220
Stock
53,233
In Stock :
53,233

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
50W
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
450V
Max Power Dissipation :
50W
REACH SVHC :
No SVHC
Collector Emitter Breakdown Voltage :
450V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
JEDEC-95 Code :
TO-220AB
Number of Elements :
1
Current - Collector Cutoff (Max) :
200μA
Max Collector Current :
2A
hFE Min :
30
Number of Pins :
3
Pin Count :
3
Emitter Base Voltage (VEBO) :
5V
Mounting Type :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Transition Frequency :
4MHz
Weight :
4.535924g
Current Rating :
2A
Packaging :
Tube
Element Configuration :
Single
Collector Base Voltage (VCBO) :
1kV
Transistor Element Material :
SILICON
Transistor Type :
NPN
Published :
2006
Radiation Hardening :
No
Contact Plating :
Tin
Case Connection :
COLLECTOR
Polarity/Channel Type :
NPN
Number of Terminations :
3
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 100mA 5V
Surface Mount :
No
Width :
4.826mm
Length :
10.2616mm
Lead Free :
Lead Free
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Collector Emitter Voltage (VCEO) :
450V
Vce Saturation (Max) @ Ib, Ic :
1V @ 200mA, 1A
Factory Lead Time :
8 Weeks
Collector Emitter Saturation Voltage :
1V
Transistor Application :
SWITCHING
Frequency :
4MHz
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-65°C~150°C TJ
ECCN Code :
EAR99
JESD-609 Code :
e3
Height :
15.748mm
Gain Bandwidth Product :
4MHz
Introducing Transistors - Bipolar (BJT) - Single onsemi BUX85G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, BUX85G pinout, BUX85G datasheet PDF, BUX85G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUX85G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUX85G


NPN -65°C~150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUX85G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 2A volts.

BUX85G Features


the DC current gain for this device is 30 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 4MHz


BUX85G Applications


There are a lot of ON Semiconductor
BUX85G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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