BUX85G
- Mfr.Part #
- BUX85G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 2A TO220
- Stock
- 53,233
- In Stock :
- 53,233
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 2A
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 450V
- Number of Elements :
- 1
- hFE Min :
- 30
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 450V
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Current Rating :
- 2A
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Transition Frequency :
- 4MHz
- Collector Base Voltage (VCBO) :
- 1kV
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Collector Emitter Voltage (VCEO) :
- 450V
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 4MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Packaging :
- Tube
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 100mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 50W
- Width :
- 4.826mm
- Current - Collector Cutoff (Max) :
- 200μA
- Power Dissipation :
- 50W
- Length :
- 10.2616mm
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Frequency :
- 4MHz
- Height :
- 15.748mm
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1V
- Published :
- 2006
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Datasheets
- BUX85G

NPN -65°C~150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUX85G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 2A volts.
BUX85G Features
the DC current gain for this device is 30 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 4MHz
BUX85G Applications
There are a lot of ON Semiconductor
BUX85G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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