BUX10
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- Mfr.Part #
- BUX10
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 125V 25A TO3
- Stock
- 1,475
- In Stock ：
- 1,475
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 39.5mm
- Number of Elements :
- 1
- Base Part Number :
- BUX10
- Mounting Type :
- Chassis Mount
- Max Power Dissipation :
- 150W
- Packaging :
- Tube
- ECCN Code :
- EAR99
- hFE Min :
- 20
- Frequency :
- 8MHz
- Collector Emitter Voltage (VCEO) :
- 125V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 700mV
- Terminal Position :
- BOTTOM
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 150W
- Operating Temperature :
- 200°C TJ
- Gain Bandwidth Product :
- 8MHz
- Mount :
- Chassis Mount, Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 2A, 20A
- JESD-30 Code :
- O-MBFM-P2
- Pin Count :
- 2
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-204AA, TO-3
- Radiation Hardening :
- No
- Height :
- 8.7mm
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 8MHz
- Max Collector Current :
- 25A
- Current - Collector Cutoff (Max) :
- 1.5mA
- Collector Emitter Breakdown Voltage :
- 125V
- Terminal Form :
- PIN/PEG
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10A 2V
- Width :
- 26.2mm
- Voltage - Rated DC :
- 125V
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Current Rating :
- 25A
- Collector Base Voltage (VCBO) :
- 160V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Datasheets
- BUX10
BUX10 Documents
NPN 200°C TJ 1.5mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tube Chassis Mount
BUX10 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 10A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 2A, 20A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 25A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 8MHz.Single BJT transistor is possible to have a collector current as low as 25A volts at Single BJT transistors maximum.
BUX10 Features
the DC current gain for this device is 20 @ 10A 2V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 1.2V @ 2A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 25A
a transition frequency of 8MHz
BUX10 Applications
There are a lot of STMicroelectronics
BUX10 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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