BUT11ATU
- Mfr.Part #
- BUT11ATU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A TO220-3
- Stock
- 20,988
- In Stock :
- 20,988
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 1.8g
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 450V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Max Collector Current :
- 5A
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 450V
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Base Voltage (VCBO) :
- 1kV
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 100W
- Qualification Status :
- Not Qualified
- Width :
- 4.5mm
- Polarity/Channel Type :
- NPN
- Height :
- 15.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 2.5A
- Base Part Number :
- BUT11
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- Current Rating :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 450V
- Collector Emitter Saturation Voltage :
- 1.5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Length :
- 9.9mm
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- DC Current Gain-Min (hFE) :
- 10
- Emitter Base Voltage (VEBO) :
- 9V
- Published :
- 2001
- Max Power Dissipation :
- 100W
- Datasheets
- BUT11ATU

NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUT11ATU Overview
Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 500mA, 2.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 5A volts.
BUT11ATU Features
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
BUT11ATU Applications
There are a lot of ON Semiconductor
BUT11ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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