BUR51
- Mfr.Part #
- BUR51
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 60A TO3
- Stock
- 11,637
- In Stock :
- 11,637
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 20
- Peak Reflow Temperature (Cel) :
- 245
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 4V
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 300V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 1000ns
- Transition Frequency :
- 16MHz
- Lead Free :
- Lead Free
- Terminal Form :
- PIN/PEG
- Reach Compliance Code :
- not_compliant
- Voltage - Rated DC :
- 300V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- 200°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 350W
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 5A, 50A
- Number of Terminations :
- 2
- JESD-30 Code :
- O-MBFM-P2
- Turn Off Time-Max (toff) :
- 2600ns
- Transistor Type :
- NPN
- Max Collector Current :
- 60A
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1mA
- Package / Case :
- TO-204AA, TO-3
- Max Power Dissipation :
- 350W
- Emitter Base Voltage (VEBO) :
- 10V
- Pin Count :
- 2
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Current Rating :
- 60A
- Mount :
- Chassis Mount
- Collector Emitter Breakdown Voltage :
- 200V
- Gain Bandwidth Product :
- 16MHz
- Number of Elements :
- 1
- Base Part Number :
- BUR51
- Datasheets
- BUR51

NPN 200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tube Chassis Mount
BUR51 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 5A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 5A, 50A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 60A.A transition frequency of 16MHz is present in the part.Collector current can be as low as 60A volts at its maximum.
BUR51 Features
the DC current gain for this device is 20 @ 5A 4V
the vce saturation(Max) is 1.5V @ 5A, 50A
the emitter base voltage is kept at 10V
the current rating of this device is 60A
a transition frequency of 16MHz
BUR51 Applications
There are a lot of STMicroelectronics
BUR51 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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