BULK128D-B

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Mfr.Part #
BULK128D-B
Manufacturer
STMicroelectronics
Package / Case
SOT-82
Datasheet
Download
Description
TRANS NPN 400V 4A SOT82-3
Stock
1,834
In Stock :
1,834

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
JESD-609 Code :
e3
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
400V
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500mA, 2.5A
Packaging :
Tube
Transistor Application :
SWITCHING
Number of Terminations :
3
Mount :
Through Hole
Operating Temperature :
150°C TJ
Max Collector Current :
4A
Package / Case :
SOT-82
Power Dissipation :
55W
Emitter Base Voltage (VEBO) :
9V
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Collector Base Voltage (VCBO) :
700V
Pin Count :
3
Transistor Type :
NPN
REACH SVHC :
No SVHC
Mounting Type :
Through Hole
Base Part Number :
BULK128
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
250μA
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Collector Emitter Breakdown Voltage :
400V
Max Power Dissipation :
55W
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULK128D-B from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:SOT-82, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:BULK128, BULK128D-B pinout, BULK128D-B datasheet PDF, BULK128D-B amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULK128D-B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN SOT-82 Tube Through Hole

BULK128D-B Overview


In this device, the DC current gain is 8 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500mA, 2.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 4A volts.

BULK128D-B Features


the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the emitter base voltage is kept at 9V


BULK128D-B Applications


There are a lot of STMicroelectronics
BULK128D-B applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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