BULK128D-B

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Mfr.Part #
BULK128D-B
Manufacturer
STMicroelectronics
Package / Case
SOT-82
Datasheet
Download
Description
TRANS NPN 400V 4A SOT82-3
Stock
1,834
In Stock :
1,834

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
ECCN Code :
EAR99
Package / Case :
SOT-82
Mount :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500mA, 2.5A
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
9V
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
400V
Max Power Dissipation :
55W
Radiation Hardening :
No
Element Configuration :
Single
Packaging :
Tube
Collector Emitter Breakdown Voltage :
400V
Base Part Number :
BULK128
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
700V
Max Collector Current :
4A
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Polarity/Channel Type :
NPN
Mounting Type :
Through Hole
Number of Pins :
3
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Transistor Type :
NPN
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
Transistor Element Material :
SILICON
Pin Count :
3
Power Dissipation :
55W
REACH SVHC :
No SVHC
Current - Collector Cutoff (Max) :
250μA
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULK128D-B from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-82, Number of Terminations:3, Base Part Number:BULK128, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:150°C TJ, BULK128D-B pinout, BULK128D-B datasheet PDF, BULK128D-B amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULK128D-B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN SOT-82 Tube Through Hole

BULK128D-B Overview


In this device, the DC current gain is 8 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500mA, 2.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 4A volts.

BULK128D-B Features


the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the emitter base voltage is kept at 9V


BULK128D-B Applications


There are a lot of STMicroelectronics
BULK128D-B applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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