BUL58D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

9V

JEDEC-95 Code :

TO-220AB

Transistor Type :

NPN

Pin Count :

3

Width :

4.6mm

Max Collector Current :

8A

Height :

9.15mm

hFE Min :

5

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 5A 5V

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

800V

Collector Emitter Saturation Voltage :

2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Power Dissipation :

85W

Element Configuration :

Single

Mount :

Through Hole

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Pins :

3

Additional Feature :

High Reliability

ECCN Code :

EAR99

Max Breakdown Voltage :

450V

Base Part Number :

BUL58

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

450V

Length :

10.4mm

Contact Plating :

Tin

Packaging :

Tube

Max Power Dissipation :

85W

Lead Free :

Lead Free

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

VCEsat-Max :

2 V

Vce Saturation (Max) @ Ib, Ic :

2V @ 1A, 5A

Number of Elements :

1

Collector Emitter Breakdown Voltage :

450V

Number of Terminations :

3

Current - Collector Cutoff (Max) :

200μA

REACH SVHC :

No SVHC