BUK9Y6R0-60E,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

Published :

2013

Transistor Application :

SWITCHING

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6319pF @ 25V

Gate to Source Voltage (Vgs) :

10V

Rise Time :

44ns

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

37 ns

Continuous Drain Current (ID) :

100A

Power Dissipation-Max :

195W Tc

Vgs (Max) :

±10V

Turn On Delay Time :

24 ns

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

MO-235

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Power Dissipation :

195W

Gate Charge (Qg) (Max) @ Vgs :

39.4nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Max Dual Supply Voltage :

60V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

FET Type :

N-Channel

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, TrenchMOS™

Radiation Hardening :

No

Surface Mount :

yes

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 25A, 10V

Turn-Off Delay Time :

60 ns

Mounting Type :

Surface Mount

Package / Case :

SC-100, SOT-669

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain-source On Resistance-Max :

0.006Ohm

Number of Pins :

4