BUK9Y65-100E,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

Terminal Form :

Gull wing

Turn-Off Delay Time :

19.3 ns

JEDEC-95 Code :

MO-235

Number of Channels :

1

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Pin Count :

4

Rise Time :

13.6ns

Power Dissipation-Max :

64W Tc

Drain to Source Breakdown Voltage :

100V

Pulsed Drain Current-Max (IDM) :

76A

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Avalanche Energy Rating (Eas) :

25.3 mJ

Max Dual Supply Voltage :

100V

Additional Feature :

AVALANCHE RATED

Diameter :

15.875mm

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

8.1 ns

Reach Compliance Code :

not_compliant

Material :

Metal

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

63.3m Ω @ 5A, 10V

Element Configuration :

Single

Continuous Drain Current (ID) :

19A

Number of Terminations :

4

Drain-source On Resistance-Max :

0.065Ohm

FET Type :

N-Channel

Fall Time (Typ) :

12.6 ns

Factory Lead Time :

12 Weeks

Package / Case :

SC-100, SOT-669

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

15V

Input Capacitance (Ciss) (Max) @ Vds :

1523pF @ 25V

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Number of Pins :

4

Vgs (Max) :

±10V

Color :

Black

Height :

15.875mm

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Published :

2013

Transistor Application :

SWITCHING

Case Connection :

DRAIN