BUK9Y3R0-40E,115
- Mfr.Part #
- BUK9Y3R0-40E,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A LFPAK56
- Stock
- 4,478
- In Stock :
- 4,478
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Max Dual Supply Voltage :
- 40V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 35.5nC @ 5V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 25A, 10V
- JEDEC-95 Code :
- MO-235
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 5962pF @ 25V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.003Ohm
- Package / Case :
- SC-100, SOT-669
- Number of Channels :
- 1
- Fall Time (Typ) :
- 34 ns
- Surface Mount :
- yes
- Gate to Source Voltage (Vgs) :
- 10V
- Contact Plating :
- Tin
- Case Connection :
- DRAIN
- Rise Time :
- 44ns
- Power Dissipation-Max :
- 194W Tc
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±10V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Turn On Delay Time :
- 24 ns
- JESD-609 Code :
- e3
- Published :
- 2014
- Turn-Off Delay Time :
- 53 ns
- Continuous Drain Current (ID) :
- 100A
- Datasheets
- BUK9Y3R0-40E,115

N-Channel Tape & Reel (TR) 2.5m Ω @ 25A, 10V ±10V 5962pF @ 25V 35.5nC @ 5V SC-100, SOT-669
BUK9Y3R0-40E,115 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5962pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.With a drain-source breakdown voltage of 40V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 40V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 53 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 40V.Using drive voltage (5V) reduces this device's overall power consumption.
BUK9Y3R0-40E,115 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 53 ns
BUK9Y3R0-40E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y3R0-40E,115 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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