BUK9Y29-40E,115
- Mfr.Part #
- BUK9Y29-40E,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 25A LFPAK56
- Stock
- 1,194
- In Stock :
- 1,194
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Number of Channels :
- 1
- Published :
- 2013
- Continuous Drain Current (ID) :
- 25A
- Avalanche Energy Rating (Eas) :
- 8.77 mJ
- Surface Mount :
- yes
- JEDEC-95 Code :
- MO-235
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±10V
- Turn-Off Delay Time :
- 9 ns
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Power Dissipation-Max :
- 37W Tc
- Pin Count :
- 4
- Package / Case :
- SC-100, SOT-669
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Fall Time (Typ) :
- 5 ns
- Drain-source On Resistance-Max :
- 0.029Ohm
- Max Dual Supply Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 5A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 6 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Transistor Element Material :
- SILICON
- Rise Time :
- 7ns
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 10V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 5V
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 12 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 664pF @ 25V
- Number of Pins :
- 4
- Datasheets
- BUK9Y29-40E,115

N-Channel Tape & Reel (TR) 25m Ω @ 5A, 10V ±10V 664pF @ 25V 5nC @ 5V SC-100, SOT-669
BUK9Y29-40E,115 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 8.77 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 664pF @ 25V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 9 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.With 40V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 5V volts (5V).
BUK9Y29-40E,115 Features
the avalanche energy rating (Eas) is 8.77 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 9 ns
BUK9Y29-40E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y29-40E,115 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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