BUK9Y19-55B,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SC-100, SOT-669

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1992pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Terminal Form :

Gull wing

Number of Pins :

4

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

55V

Avalanche Energy Rating (Eas) :

80 mJ

Transistor Application :

SWITCHING

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

18 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

15V

Contact Plating :

Tin

Pin Count :

4

Series :

Automotive, AEC-Q101, TrenchMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

134 ns

Radiation Hardening :

No

Rise Time :

180ns

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Surface Mount :

yes

Transistor Element Material :

SILICON

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Max Dual Supply Voltage :

55V

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

17.3m Ω @ 20A, 10V

Vgs (Max) :

±15V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Turn-Off Delay Time :

44 ns

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Power Dissipation :

85W

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 1mA

Power Dissipation-Max :

85W Tc

Continuous Drain Current (ID) :

46A