BUK9Y19-100E,115
- Mfr.Part #
- BUK9Y19-100E,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 56A LFPAK56
- Stock
- 16,490
- In Stock :
- 16,490
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 226A
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 5V
- Number of Elements :
- 1
- Terminal Position :
- Single
- Vgs (Max) :
- ±10V
- Max Dual Supply Voltage :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Rise Time :
- 36.8ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 167W Tc
- Case Connection :
- DRAIN
- Package / Case :
- SC-100, SOT-669
- Factory Lead Time :
- 12 Weeks
- Drain-source On Resistance-Max :
- 0.019Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 4
- Fall Time (Typ) :
- 34.3 ns
- Gate to Source Voltage (Vgs) :
- 10V
- Continuous Drain Current (ID) :
- 56A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5085pF @ 25V
- Turn-Off Delay Time :
- 59.6 ns
- Reach Compliance Code :
- not_compliant
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- JEDEC-95 Code :
- MO-235
- Turn On Delay Time :
- 18.5 ns
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 15A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2016
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Pin Count :
- 4
- Datasheets
- BUK9Y19-100E,115

N-Channel Tape & Reel (TR) 18m Ω @ 15A, 10V ±10V 5085pF @ 25V 39nC @ 5V SC-100, SOT-669
BUK9Y19-100E,115 Overview
A device's maximum input capacitance is 5085pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 56A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 59.6 ns.Its maximum pulsed drain current is 226A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.Powered by 100V, it supports maximum dual supply voltages.This device uses no drive voltage (5V) to reduce its overall power consumption.
BUK9Y19-100E,115 Features
a continuous drain current (ID) of 56A
the turn-off delay time is 59.6 ns
based on its rated peak drain current 226A.
BUK9Y19-100E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y19-100E,115 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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