BUK9Y153-100E,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SC-100, SOT-669

Factory Lead Time :

12 Weeks

Pin Count :

4

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 5V

Turn-Off Delay Time :

10 ns

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Max Dual Supply Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Number of Pins :

4

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Avalanche Energy Rating (Eas) :

9.5 mJ

Drain to Source Breakdown Voltage :

100V

Rise Time :

10.9ns

Turn On Delay Time :

6 ns

Continuous Drain Current (ID) :

9.4A

Fall Time (Typ) :

7.9 ns

Pulsed Drain Current-Max (IDM) :

38A

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Vgs (Max) :

±10V

JEDEC-95 Code :

MO-235

Terminal Form :

Gull wing

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

716pF @ 25V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

5V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Terminations :

4

Transistor Application :

SWITCHING

Power Dissipation-Max :

37W Tc

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

146m Ω @ 2A, 10V

Number of Channels :

1

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

15V