BUK9Y14-80E,115
- Mfr.Part #
- BUK9Y14-80E,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 62A LFPAK56
- Stock
- 20,672
- In Stock :
- 20,672
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 45.3 ns
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Pulsed Drain Current-Max (IDM) :
- 250A
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 147W Tc
- Additional Feature :
- AVALANCHE RATED
- Fall Time (Typ) :
- 24.7 ns
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 15.3 ns
- Published :
- 2014
- Package / Case :
- SC-100, SOT-669
- JEDEC-95 Code :
- MO-235
- Avalanche Energy Rating (Eas) :
- 79.6 mJ
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 28.9nC @ 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 80V
- Rise Time :
- 24.6ns
- Gate to Source Voltage (Vgs) :
- 15V
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Number of Terminations :
- 4
- Continuous Drain Current (ID) :
- 62A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4640pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 15A, 10V
- Surface Mount :
- yes
- Max Dual Supply Voltage :
- 80V
- Vgs (Max) :
- ±10V
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Datasheets
- BUK9Y14-80E,115

N-Channel Tape & Reel (TR) 14m Ω @ 15A, 10V ±10V 4640pF @ 25V 28.9nC @ 5V SC-100, SOT-669
BUK9Y14-80E,115 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 79.6 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4640pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 45.3 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 250A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.The maximum dual supply voltage can be supported by 80V.In addition to reducing power consumption, this device uses drive voltage (5V).
BUK9Y14-80E,115 Features
the avalanche energy rating (Eas) is 79.6 mJ
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 45.3 ns
based on its rated peak drain current 250A.
BUK9Y14-80E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y14-80E,115 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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