BUK9Y14-40B,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

89 mJ

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Published :

2015

Pin Count :

4

Continuous Drain Current (ID) :

56A

Number of Terminations :

4

Gate to Source Voltage (Vgs) :

15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

40V

Fall Time (Typ) :

42 ns

Reach Compliance Code :

not_compliant

Max Dual Supply Voltage :

40V

Factory Lead Time :

12 Weeks

Width :

6.35mm

Rise Time :

34ns

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Position :

Single

Transistor Application :

SWITCHING

Weight :

4.535924g

Height :

6.35mm

Turn On Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±15V

Pulsed Drain Current-Max (IDM) :

226A

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Series :

Automotive, AEC-Q101, TrenchMOS™

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

85W

Drive Voltage (Max Rds On,Min Rds On) :

5V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

68 ns

Vgs(th) (Max) @ Id :

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Operating Temperature :

-55°C~175°C TJ

Contact Plating :

Tin

Number of Elements :

1

Package / Case :

SC-100, SOT-669

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.016Ohm

Length :

6.35mm

Power Dissipation-Max :

85W Tc

Rds On (Max) @ Id, Vgs :

11m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4