BUK9Y11-80EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Material :

Brass, Plastic

Rise Time :

40ns

Pin Count :

4

Gate to Source Voltage (Vgs) :

10V

Turn On Delay Time :

23 ns

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

84A

Gate Charge (Qg) (Max) @ Vgs :

44.2nC @ 5V

Height :

13.9954mm

Input Capacitance (Ciss) (Max) @ Vds :

6506pF @ 25V

Vgs (Max) :

±10V

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Diameter :

16.764mm

Package / Case :

SC-100, SOT-669

Case Connection :

DRAIN

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

5V

Termination :

Crimp

Pulsed Drain Current-Max (IDM) :

336A

Series :

TrenchMOS™

Wire Gauge (Max) :

24 AWG

Color :

Black

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Fall Time (Typ) :

36 ns

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Max Dual Supply Voltage :

80V

Wire Gauge (Min) :

20 AWG

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

84A Tc

JEDEC-95 Code :

MO-235

FET Type :

N-Channel

Element Configuration :

Single

Published :

2013

Transistor Application :

SWITCHING

Power Dissipation-Max :

194W Tc

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Turn-Off Delay Time :

62 ns

Number of Pins :

4

Mounting Type :

Surface Mount

Number of Elements :

1