BUK9Y11-30B,115

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Mfr.Part #
BUK9Y11-30B,115
Manufacturer
Nexperia
Package / Case
SC-100, SOT-669
Datasheet
Download
Description
MOSFET N-CH 30V 59A LFPAK56
Stock
2
In Stock :
2

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
62 ns
Rds On (Max) @ Id, Vgs :
9m Ω @ 25A, 10V
Drain to Source Breakdown Voltage :
30V
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
16.5nC @ 5V
Width :
6.35mm
Published :
2007
Element Configuration :
Single
FET Type :
N-Channel
JEDEC-95 Code :
MO-235
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Additional Feature :
LOGIC LEVEL COMPATIBLE
Operating Temperature :
-55°C~175°C TJ
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.012Ohm
Continuous Drain Current (ID) :
59A
Factory Lead Time :
12 Weeks
Weight :
4.535924g
Vgs(th) (Max) @ Id :
2V @ 1mA
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Current - Continuous Drain (Id) @ 25°C :
59A Tc
Contact Plating :
Tin
Fall Time (Typ) :
42 ns
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
14 ns
Surface Mount :
yes
Max Dual Supply Voltage :
30V
Pin Count :
4
Vgs (Max) :
±15V
Power Dissipation :
75W
Pulsed Drain Current-Max (IDM) :
239A
Case Connection :
DRAIN
Length :
6.35mm
Height :
6.35mm
Gate to Source Voltage (Vgs) :
15V
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
4
Series :
Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code :
e3
Number of Terminations :
4
Avalanche Energy Rating (Eas) :
112 mJ
Power Dissipation-Max :
75W Tc
Package / Case :
SC-100, SOT-669
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
1614pF @ 25V
Rise Time :
33ns
Number of Elements :
1
Datasheets
BUK9Y11-30B,115
Introducing Transistors - FETs, MOSFETs - Single Nexperia BUK9Y11-30B,115 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Pins:4, Number of Terminations:4, Package / Case:SC-100, SOT-669, BUK9Y11-30B,115 pinout, BUK9Y11-30B,115 datasheet PDF, BUK9Y11-30B,115 amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia BUK9Y11-30B,115 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BUK9Y11-30B,115


N-Channel Tape & Reel (TR) 9m Ω @ 25A, 10V ±15V 1614pF @ 25V 16.5nC @ 5V SC-100, SOT-669

BUK9Y11-30B,115 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 112 mJ.The maximum input capacitance of this device is 1614pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 59A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 62 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 239A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BUK9Y11-30B,115 Features


the avalanche energy rating (Eas) is 112 mJ
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 239A.


BUK9Y11-30B,115 Applications


There are a lot of Nexperia USA Inc.
BUK9Y11-30B,115 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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