BUK9M85-60EX
- Mfr.Part #
- BUK9M85-60EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12.8A LFPAK33
- Stock
- 2,404
- In Stock :
- 2,404
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.085Ohm
- Pin Count :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Factory Lead Time :
- 26 Weeks
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 12.8A
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 12.8A Tc
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Reference Standard :
- AEC-Q101; IEC-60134
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±10V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 51A
- Avalanche Energy Rating (Eas) :
- 4.55 mJ
- Terminal Position :
- Single
- Package / Case :
- SOT-1210, 8-LFPAK33
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 31W Tc
- DS Breakdown Voltage-Min :
- 60V
- Published :
- 2016
- Input Capacitance (Ciss) (Max) @ Vds :
- 434pF @ 25V
- JESD-30 Code :
- R-PSSO-G4
- Rds On (Max) @ Id, Vgs :
- 73m Ω @ 5A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 4.4nC @ 5V
- Datasheets
- BUK9M85-60EX

N-Channel Tape & Reel (TR) 73m Ω @ 5A, 10V ±10V 434pF @ 25V 4.4nC @ 5V 60V SOT-1210, 8-LFPAK33
BUK9M85-60EX Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4.55 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 434pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12.8A.Peak drain current for this device is 51A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (5V) reduces this device's overall power consumption.
BUK9M85-60EX Features
the avalanche energy rating (Eas) is 4.55 mJ
a continuous drain current (ID) of 12.8A
based on its rated peak drain current 51A.
a 60V drain to source voltage (Vdss)
BUK9M85-60EX Applications
There are a lot of Nexperia USA Inc.
BUK9M85-60EX applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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