BUK9M6R6-30EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Continuous Drain Current (ID) :

70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

53 mJ

Vgs (Max) :

±10V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G4

Transistor Application :

SWITCHING

Number of Terminations :

4

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

26 Weeks

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2001pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

5V

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Package / Case :

SOT-1210, 8-LFPAK33

Drain-source On Resistance-Max :

0.0066Ohm

Reference Standard :

AEC-Q101; IEC-60134

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

75W Tc

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Pulsed Drain Current-Max (IDM) :

309A

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 20A, 10V

Series :

Automotive, AEC-Q101, TrenchMOS™

Published :

2016

Mount :

Surface Mount

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Transistor Element Material :

SILICON