BUK9M5R2-30EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2016

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Package / Case :

SOT-1210, 8-LFPAK33

DS Breakdown Voltage-Min :

30V

Series :

Automotive, AEC-Q101, TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

2467pF @ 25V

Factory Lead Time :

26 Weeks

Avalanche Energy Rating (Eas) :

79.2 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

70A Ta

Transistor Application :

SWITCHING

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G4

Drain Current-Max (Abs) (ID) :

70A

Pulsed Drain Current-Max (IDM) :

358A

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0052Ohm

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±10V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 5V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 25A, 10V

Power Dissipation-Max :

79W Ta

Reference Standard :

AEC-Q101; IEC-60134

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V