BUK9M52-40EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

4.98 mJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

70A

Terminal Position :

Single

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

17.6A

Published :

2016

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

40m Ω @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

17.6A

Number of Terminations :

4

Reference Standard :

AEC-Q101; IEC-60134

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

407pF @ 25V

Number of Elements :

1

Series :

Automotive, AEC-Q101, TrenchMOS™

Drain-source On Resistance-Max :

0.052Ohm

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 5V

JESD-609 Code :

e3

Package / Case :

SOT-1210, 8-LFPAK33

Power Dissipation-Max :

31W

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

40V

Pin Count :

8

Vgs (Max) :

±10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

26 Weeks

DS Breakdown Voltage-Min :

40V

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G4

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V