BUK9M35-80EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.035Ohm

Case Connection :

DRAIN

Factory Lead Time :

26 Weeks

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 5V

Number of Terminations :

4

Package / Case :

SOT-1210, 8-LFPAK33

Series :

Automotive, AEC-Q101, TrenchMOS™

DS Breakdown Voltage-Min :

80V

Input Capacitance (Ciss) (Max) @ Vds :

1804pF @ 25V

Avalanche Energy Rating (Eas) :

32.3 mJ

Drive Voltage (Max Rds On,Min Rds On) :

5V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G4

Vgs (Max) :

±10V

Published :

2016

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Terminal Position :

Single

Terminal Form :

Gull wing

Mount :

Surface Mount

Reference Standard :

AEC-Q101; IEC-60134

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

80V

Rds On (Max) @ Id, Vgs :

31m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

26A

Mounting Type :

Surface Mount

Number of Elements :

1

Power Dissipation-Max :

62W Tc

Pulsed Drain Current-Max (IDM) :

106A