BUK9M34-100EX
- Mfr.Part #
- BUK9M34-100EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 29A LFPAK33
- Stock
- 11,128
- In Stock :
- 11,128
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G4
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 29A
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2844pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 24.7nC @ 5V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±10V
- Package / Case :
- SOT-1210, 8-LFPAK33
- Avalanche Energy Rating (Eas) :
- 57.8 mJ
- Factory Lead Time :
- 26 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Drain to Source Voltage (Vdss) :
- 100V
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 5A, 10V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Pin Count :
- 8
- Reference Standard :
- AEC-Q101; IEC-60134
- Pulsed Drain Current-Max (IDM) :
- 114A
- Power Dissipation-Max :
- 79W Tc
- Published :
- 2016
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.034Ohm
- Datasheets
- BUK9M34-100EX

N-Channel Tape & Reel (TR) 34m Ω @ 5A, 10V ±10V 2844pF @ 25V 24.7nC @ 5V 100V SOT-1210, 8-LFPAK33
BUK9M34-100EX Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 57.8 mJ.A device's maximal input capacitance is 2844pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 29A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 114A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V).
BUK9M34-100EX Features
the avalanche energy rating (Eas) is 57.8 mJ
a continuous drain current (ID) of 29A
based on its rated peak drain current 114A.
a 100V drain to source voltage (Vdss)
BUK9M34-100EX Applications
There are a lot of Nexperia USA Inc.
BUK9M34-100EX applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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