BUK9M34-100EX
- Mfr.Part #
- BUK9M34-100EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 29A LFPAK33
- Stock
- 11,128
- In Stock :
- 11,128
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 29A
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.034Ohm
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±10V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Published :
- 2016
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Factory Lead Time :
- 26 Weeks
- Pulsed Drain Current-Max (IDM) :
- 114A
- Drain to Source Voltage (Vdss) :
- 100V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SOT-1210, 8-LFPAK33
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 5A, 10V
- Power Dissipation-Max :
- 79W Tc
- JESD-30 Code :
- R-PSSO-G4
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 24.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2844pF @ 25V
- Number of Terminations :
- 4
- FET Type :
- N-Channel
- Pin Count :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 57.8 mJ
- Mounting Type :
- Surface Mount
- Reference Standard :
- AEC-Q101; IEC-60134
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 100V
- Mount :
- Surface Mount
- Datasheets
- BUK9M34-100EX
BUK9M34-100EX Documents

N-Channel Tape & Reel (TR) 34m Ω @ 5A, 10V ±10V 2844pF @ 25V 24.7nC @ 5V 100V SOT-1210, 8-LFPAK33
BUK9M34-100EX Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 57.8 mJ.A device's maximal input capacitance is 2844pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 29A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 114A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V).
BUK9M34-100EX Features
the avalanche energy rating (Eas) is 57.8 mJ
a continuous drain current (ID) of 29A
based on its rated peak drain current 114A.
a 100V drain to source voltage (Vdss)
BUK9M34-100EX Applications
There are a lot of Nexperia USA Inc.
BUK9M34-100EX applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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