BUK9M28-80EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2275pF @ 25V

Reference Standard :

AEC-Q101; IEC-60134

Vgs (Max) :

±10V

DS Breakdown Voltage-Min :

80V

Transistor Element Material :

SILICON

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

80V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

26 Weeks

Rds On (Max) @ Id, Vgs :

25m Ω @ 10A, 10V

Continuous Drain Current (ID) :

33A

Avalanche Energy Rating (Eas) :

42.2 mJ

FET Type :

N-Channel

Power Dissipation-Max :

75W Tc

Transistor Application :

SWITCHING

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V

Terminal Form :

Gull wing

Package / Case :

SOT-1210, 8-LFPAK33

Case Connection :

DRAIN

Series :

Automotive, AEC-Q101, TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Pin Count :

8

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Drain-source On Resistance-Max :

0.028Ohm

Number of Terminations :

4

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G4

Published :

2016

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Gate Charge (Qg) (Max) @ Vgs :

16.7nC @ 5V

Pulsed Drain Current-Max (IDM) :

131A

Mounting Type :

Surface Mount