BUK9M19-60EX

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Mfr.Part #
BUK9M19-60EX
Manufacturer
Nexperia
Package / Case
SOT-1210, 8-LFPAK33
Datasheet
Download
Description
MOSFET N-CH 60V 38A LFPAK33
Stock
1,138
In Stock :
1,138

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Reference Standard :
AEC-Q101; IEC-60134
Drain-source On Resistance-Max :
0.019Ohm
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
4
Vgs(th) (Max) @ Id :
2.1V @ 1mA
Current - Continuous Drain (Id) @ 25°C :
38A Tc
Avalanche Energy Rating (Eas) :
30 mJ
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Pin Count :
8
Series :
Automotive, AEC-Q101, TrenchMOS™
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
60V
Power Dissipation-Max :
62W Tc
Mount :
Surface Mount
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
1814pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Pulsed Drain Current-Max (IDM) :
152A
Rds On (Max) @ Id, Vgs :
17m Ω @ 10A, 10V
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSSO-G4
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
60V
Continuous Drain Current (ID) :
38A
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
13.8nC @ 5V
Packaging :
Tape and Reel (TR)
Published :
2016
Package / Case :
SOT-1210, 8-LFPAK33
Factory Lead Time :
26 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
5V
Mounting Type :
Surface Mount
Vgs (Max) :
±10V
Datasheets
BUK9M19-60EX
Introducing Transistors - FETs, MOSFETs - Single Nexperia BUK9M19-60EX from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:4, Package / Case:SOT-1210, 8-LFPAK33, Mounting Type:Surface Mount, BUK9M19-60EX pinout, BUK9M19-60EX datasheet PDF, BUK9M19-60EX amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia BUK9M19-60EX ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BUK9M19-60EX


N-Channel Tape & Reel (TR) 17m Ω @ 10A, 10V ±10V 1814pF @ 25V 13.8nC @ 5V 60V SOT-1210, 8-LFPAK33

BUK9M19-60EX Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 30 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1814pF @ 25V.This device conducts a continuous drain current (ID) of 38A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 152A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 5V volts (5V).

BUK9M19-60EX Features


the avalanche energy rating (Eas) is 30 mJ
a continuous drain current (ID) of 38A
based on its rated peak drain current 152A.
a 60V drain to source voltage (Vdss)


BUK9M19-60EX Applications


There are a lot of Nexperia USA Inc.
BUK9M19-60EX applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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