BUK9M15-60EX
- Mfr.Part #
- BUK9M15-60EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 47A LFPAK33
- Stock
- 27,612
- In Stock :
- 27,612
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Surface Mount :
- yes
- Power Dissipation-Max :
- 75W Ta
- Pin Count :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 60V
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.015Ohm
- Factory Lead Time :
- 26 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 2230pF @ 25V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 10A, 10V
- Pulsed Drain Current-Max (IDM) :
- 188A
- Current - Continuous Drain (Id) @ 25°C :
- 47A Ta
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 47A
- FET Type :
- N-Channel
- Published :
- 2016
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 2.45V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- DS Breakdown Voltage-Min :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Reference Standard :
- AEC-Q101; IEC-60134
- Package / Case :
- SOT-1210, 8-LFPAK33
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 39 mJ
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Number of Terminations :
- 4
- JESD-30 Code :
- R-PSSO-G4
- Datasheets
- BUK9M15-60EX

N-Channel Tape & Reel (TR) 13m Ω @ 10A, 10V ±10V 2230pF @ 25V 17nC @ 5V 60V SOT-1210, 8-LFPAK33
BUK9M15-60EX Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 39 mJ.The maximum input capacitance of this device is 2230pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 47A.There is no pulsed drain current maximum for this device based on its rated peak drain current 188A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.
BUK9M15-60EX Features
the avalanche energy rating (Eas) is 39 mJ
based on its rated peak drain current 188A.
a 60V drain to source voltage (Vdss)
BUK9M15-60EX Applications
There are a lot of Nexperia USA Inc.
BUK9M15-60EX applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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