BUK9M12-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2769pF @ 25V

Rds On (Max) @ Id, Vgs :

11m Ω @ 15A, 10V

Terminal Form :

Gull wing

FET Type :

N-Channel

Terminal Position :

Single

Vgs (Max) :

±10V

Avalanche Energy Rating (Eas) :

50.5 mJ

Drive Voltage (Max Rds On,Min Rds On) :

5V

JESD-30 Code :

R-PSSO-G4

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

216A

Power Dissipation-Max :

79W Tc

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Pin Count :

8

Published :

2016

DS Breakdown Voltage-Min :

60V

Drain-source On Resistance-Max :

0.012Ohm

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Package / Case :

SOT-1210, 8-LFPAK33

Continuous Drain Current (ID) :

54A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

54A Tc

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Terminations :

4

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Reference Standard :

AEC-Q101; IEC-60134

Factory Lead Time :

26 Weeks