BUK9K5R6-30EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

305A

FET Type :

2 N-Channel (Dual)

Case Connection :

DRAIN

Package / Case :

SOT-1205, 8-LFPAK56

Drain-source On Resistance-Max :

0.0058ohm

Number of Terminations :

6

JESD-30 Code :

R-PDSO-G6

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2480pF @ 25V

Factory Lead Time :

12 Weeks

Published :

2015

Number of Pins :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.1V @ 1mA

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Power - Max :

64W

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

40A

Mounting Type :

Surface Mount

Max Power Dissipation :

64W

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

22.6nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

169 mJ

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 10A, 5V

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing