BUK9K5R6-30EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Max Power Dissipation :

64W

Published :

2015

Number of Pins :

4

Continuous Drain Current (ID) :

40A

JESD-30 Code :

R-PDSO-G6

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

305A

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

169 mJ

Drain-source On Resistance-Max :

0.0058ohm

FET Feature :

Logic Level Gate

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Power - Max :

64W

Gate Charge (Qg) (Max) @ Vgs :

22.6nC @ 5V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 10A, 5V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Pin Count :

8

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-1205, 8-LFPAK56

Input Capacitance (Ciss) (Max) @ Vds :

2480pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6