BUK9K5R1-30EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

4

Published :

2015

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PDSO-G6

Vgs(th) (Max) @ Id :

2.1V @ 1mA

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

26.7nC @ 5V

Max Power Dissipation :

68W

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 10A, 5V

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

DS Breakdown Voltage-Min :

30V

Package / Case :

SOT-1205, 8-LFPAK56

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0053Ohm

Pulsed Drain Current-Max (IDM) :

329A

Number of Elements :

2

Number of Terminations :

6

Power - Max :

68W

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3065pF @ 25V

Pin Count :

8