BUK9E3R2-40B,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

HTS Code :

8541.29.00.75

Drain to Source Voltage (Vdss) :

40V

Operating Temperature :

-55°C~175°C TJ

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

10502pF @ 25V

Drain Current-Max (Abs) (ID) :

100A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Surface Mount :

No

Published :

2014

DS Breakdown Voltage-Min :

40V

Pulsed Drain Current-Max (IDM) :

888A

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Vgs (Max) :

±15V

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 5V

Terminal Position :

Single

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0035Ohm

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Avalanche Energy Rating (Eas) :

1200 mJ