BUK9E1R9-40E,127
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- Mfr.Part #
- BUK9E1R9-40E,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V I2PAK
- Stock
- 74
- In Stock ：
- 74
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 40V
- Drain-source On Resistance-Max :
- 0.00193Ohm
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSIP-T3
- Packaging :
- Tube
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Pin Count :
- 3
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Reference Standard :
- AEC-Q101; IEC-60134
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Published :
- 2013
- Terminal Position :
- Single
- Power Dissipation-Max (Abs) :
- 349W
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 1008 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 1228A
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 40V
- Drain Current-Max (Abs) (ID) :
- 120A
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BUK9E1R9-40E,127
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N-Channel Tube 40V TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E1R9-40E,127 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1008 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 1228A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).
BUK9E1R9-40E,127 Features
the avalanche energy rating (Eas) is 1008 mJ
based on its rated peak drain current 1228A.
a 40V drain to source voltage (Vdss)
BUK9E1R9-40E,127 Applications
There are a lot of NXP USA Inc.
BUK9E1R9-40E,127 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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