BUK9E15-60E,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

13m Ω @ 15A, 10V

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Case Connection :

DRAIN

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

40.5 mJ

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

2651pF @ 25V

Drain Current-Max (Abs) (ID) :

54A

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

216A

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

AEC-Q101; IEC-60134

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Number of Terminations :

3

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

54A Tc

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pin Count :

3

Drain-source On Resistance-Max :

0.015Ohm

Vgs (Max) :

±10V

Power Dissipation-Max :

96W Tc

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Published :

2012

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Packaging :

Tube

Terminal Finish :

Tin (Sn)