BUK9E08-55B,127
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- Mfr.Part #
- BUK9E08-55B,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- NEXPERIA BUK9E08-55B - 75A, 55V,
- Stock
- 41,081
- In Stock ：
- 41,081
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 29 ns
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Fall Time (Typ) :
- 86 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 110A
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Vgs (Max) :
- ±15V
- Packaging :
- Tube
- Max Dual Supply Voltage :
- 55V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Power Dissipation :
- 203W
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 5280pF @ 25V
- Contact Plating :
- Tin
- Gate to Source Voltage (Vgs) :
- 15V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Turn-Off Delay Time :
- 131 ns
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 55V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 5V
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Published :
- 2010
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Power Dissipation-Max :
- 203W Tc
- Rise Time :
- 123ns
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Datasheets
- BUK9E08-55B,127
N-Channel Tube 7m Ω @ 25A, 10V ±15V 5280pF @ 25V 45nC @ 5V TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E08-55B,127 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5280pF @ 25V.This device conducts a continuous drain current (ID) of 110A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 131 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 29 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 15V.With 55V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
BUK9E08-55B,127 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 131 ns
BUK9E08-55B,127 Applications
There are a lot of Nexperia USA Inc.
BUK9E08-55B,127 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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