BUK9E04-30B,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.0044Ohm

Terminal Finish :

Tin (Sn)

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Series :

TrenchMOS™

Vgs (Max) :

±15V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

HTS Code :

8541.29.00.75

Number of Elements :

1

Qualification Status :

Not Qualified

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

JESD-609 Code :

e3

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

732A

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1300 mJ

Packaging :

Tube

Power Dissipation-Max :

254W Tc

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain Current-Max (Abs) (ID) :

75A

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

6526pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

75A Tc