BUK9C10-55BIT/A,11

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Case Connection :

DRAIN

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Surface Mount

Vgs (Max) :

±15V

Avalanche Energy Rating (Eas) :

215 mJ

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

401A

Drain Current-Max (Abs) (ID) :

75A

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

4667pF @ 25V

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Number of Elements :

1

Series :

TrenchPLUS

Terminal Position :

Single

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.015Ohm

Rds On (Max) @ Id, Vgs :

9m Ω @ 10A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

Reference Standard :

AEC-Q101; IEC-60134

Power Dissipation-Max :

194W Ta

FET Type :

N-Channel

DS Breakdown Voltage-Min :

55V

Pin Count :

7

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

75A Ta