BUK9880-55A,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±15V

HTS Code :

8541.29.00.75

Avalanche Energy Rating (Eas) :

36 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

7A

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-G4

Input Capacitance (Ciss) (Max) @ Vds :

584pF @ 25V

Power Dissipation-Max :

8W Tc

Number of Terminations :

4

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Pin Count :

4

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drain-source On Resistance-Max :

0.089Ohm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Case Connection :

DRAIN

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, TrenchMOS™

Rds On (Max) @ Id, Vgs :

73m Ω @ 8A, 10V

Pulsed Drain Current-Max (IDM) :

30A

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Voltage (Vdss) :

55V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-261-4, TO-261AA

JESD-609 Code :

e3

Published :

2007

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

55V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE