BUK9875-100A,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Avalanche Energy Rating (Eas) :

49 mJ

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Package / Case :

TO-261-4, TO-261AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.29.00.75

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Form :

Gull wing

Case Connection :

DRAIN

Qualification Status :

Not Qualified

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Pulsed Drain Current-Max (IDM) :

28A

Number of Terminations :

4

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101, TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Vgs (Max) :

±10V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

72m Ω @ 8A, 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2010

Number of Elements :

1

Drain-source On Resistance-Max :

0.084Ohm

Power Dissipation-Max :

8W Tc

Drain Current-Max (Abs) (ID) :

7A