BUK9840-55115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

5A

Vgs(th) (Max) @ Id :

2V @ 1mA

Pin Count :

4

Mounting Type :

Surface Mount

FET Type :

N-Channel

Power Dissipation-Max :

1.8W Ta

Drain to Source Voltage (Vdss) :

55V

Rds On (Max) @ Id, Vgs :

40m Ω @ 5A, 5V

Drain-source On Resistance-Max :

0.04Ohm

Peak Reflow Temperature (Cel) :

260

Published :

2015

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

55V

Avalanche Energy Rating (Eas) :

60 mJ

Number of Terminations :

4

Number of Elements :

1

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

40A

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.75

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

5V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G4

Vgs (Max) :

±10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

Automotive, AEC-Q101, TrenchMOS™

Surface Mount :

yes