BUK9840-55/CUX
- Mfr.Part #
- BUK9840-55/CUX
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 5A/10.7A SOT223
- Stock
- 43,243
- In Stock :
- 43,243
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta 10.7A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2016
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Terminal Position :
- Dual
- Drain to Source Voltage (Vdss) :
- 55V
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 10V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Continuous Drain Current (ID) :
- 10.7A
- Mount :
- Surface Mount
- DS Breakdown Voltage-Min :
- 55V
- Power Dissipation-Max :
- 8.3W Tc
- Turn-Off Delay Time :
- 70 ns
- Vgs (Max) :
- ±10V
- Pin Count :
- 4
- Fall Time (Typ) :
- 70 ns
- Contact Plating :
- Tin
- Rise Time :
- 65ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Series :
- TrenchMOS™
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 60 mJ
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 5A
- Turn On Delay Time :
- 17 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 5A, 5V
- Transistor Application :
- SWITCHING
- Datasheets
- BUK9840-55/CUX

N-Channel Tape & Reel (TR) 40m Ω @ 5A, 5V ±10V 1400pF @ 25V 55V TO-261-4, TO-261AA
BUK9840-55/CUX Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.The maximum input capacitance of this device is 1400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10.7A.As shown in the table below, the drain current of this device is 5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (5V), this device helps reduce its power consumption.
BUK9840-55/CUX Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 10.7A
the turn-off delay time is 70 ns
a 55V drain to source voltage (Vdss)
BUK9840-55/CUX Applications
There are a lot of Nexperia USA Inc.
BUK9840-55/CUX applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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