BUK98180-100A,115

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Mfr.Part #
BUK98180-100A,115
Manufacturer
NXP Semiconductors
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 4.6A SOT-223
Stock
49,192
In Stock :
49,192

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Series :
Automotive, AEC-Q101, TrenchMOS™
ECCN Code :
EAR99
Surface Mount :
yes
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
18A
Current - Continuous Drain (Id) @ 25°C :
4.6A Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
2V @ 1mA
Published :
2010
JESD-609 Code :
e3
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Drain-source On Resistance-Max :
0.201Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
173m Ω @ 5A, 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PDSO-G4
FET Type :
N-Channel
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
HTS Code :
8541.29.00.75
Avalanche Energy Rating (Eas) :
16 mJ
Package / Case :
TO-261-4, TO-261AA
Terminal Finish :
Tin (Sn)
Drain Current-Max (Abs) (ID) :
4.6A
Number of Terminations :
4
Vgs (Max) :
±10V
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
100V
Pin Count :
4
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
619pF @ 25V
Terminal Position :
Dual
Case Connection :
DRAIN
Power Dissipation-Max :
8W Tc
Datasheets
BUK98180-100A,115
Introducing Transistors - FETs, MOSFETs - Single NXP Semiconductors BUK98180-100A,115 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, BUK98180-100A,115 pinout, BUK98180-100A,115 datasheet PDF, BUK98180-100A,115 amp .Beyond Transistors - FETs, MOSFETs - Single NXP Semiconductors BUK98180-100A,115 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BUK98180-100A,115


N-Channel Tape & Reel (TR) 173m Ω @ 5A, 10V ±10V 619pF @ 25V 100V TO-261-4, TO-261AA

BUK98180-100A,115 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 16 mJ.The maximum input capacitance of this device is 619pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 4.6A.There is no pulsed drain current maximum for this device based on its rated peak drain current 18A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BUK98180-100A,115 Features


the avalanche energy rating (Eas) is 16 mJ
based on its rated peak drain current 18A.
a 100V drain to source voltage (Vdss)


BUK98180-100A,115 Applications


There are a lot of NXP USA Inc.
BUK98180-100A,115 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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