BUK98150-55135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Power Dissipation-Max :

8.3W Tc

Drain-source On Resistance-Max :

0.15Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

150m Ω @ 5A, 5V

Number of Terminations :

4

HTS Code :

8541.29.00.75

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Number of Elements :

1

Published :

1998

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±10V

Avalanche Energy Rating (Eas) :

15 mJ

Drain to Source Voltage (Vdss) :

55V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

FET Type :

N-Channel

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

DS Breakdown Voltage-Min :

55V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Series :

TrenchMOS™

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

2.6A

Drive Voltage (Max Rds On,Min Rds On) :

5V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

30A

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing