BUK969R3-100E,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

95.1ns

Avalanche Energy Rating (Eas) :

219 mJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

39.5 ns

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

93.4 ns

Published :

2014

Input Capacitance (Ciss) (Max) @ Vds :

11650pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

405A

Peak Reflow Temperature (Cel) :

245

Power Dissipation-Max :

263W Tc

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

10V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 25A, 10V

Max Dual Supply Voltage :

100V

Continuous Drain Current (ID) :

100A

Gate Charge (Qg) (Max) @ Vgs :

94.3nC @ 5V

Terminal Position :

Single

Number of Pins :

3

Vgs (Max) :

±10V

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-609 Code :

e3

Series :

Automotive, AEC-Q101, TrenchMOS™

Pin Count :

3

Terminal Form :

Gull wing

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

263W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

118 ns

Vgs(th) (Max) @ Id :

2.1V @ 1mA