BUK969R3-100E,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

219 mJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Vgs (Max) :

±10V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 25A, 10V

Number of Pins :

3

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Power Dissipation :

263W

Series :

Automotive, AEC-Q101, TrenchMOS™

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

405A

Peak Reflow Temperature (Cel) :

245

Terminal Position :

Single

Fall Time (Typ) :

93.4 ns

Turn On Delay Time :

39.5 ns

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

11650pF @ 25V

Max Dual Supply Voltage :

100V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

94.3nC @ 5V

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Gate to Source Voltage (Vgs) :

10V

Rise Time :

95.1ns

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Radiation Hardening :

No

Continuous Drain Current (ID) :

100A

Drain to Source Breakdown Voltage :

100V

Power Dissipation-Max :

263W Tc

Turn-Off Delay Time :

118 ns

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Terminal Finish :

Tin (Sn)

Published :

2014