BUK9675-55A,118
- Mfr.Part #
- BUK9675-55A,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 20A D2PAK
- Stock
- 36,036
- In Stock :
- 36,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±10V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 62W
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Published :
- 2010
- Rise Time :
- 47ns
- Rds On (Max) @ Id, Vgs :
- 68m Ω @ 10A, 10V
- Gate to Source Voltage (Vgs) :
- 10V
- Drain to Source Breakdown Voltage :
- 55V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Fall Time (Typ) :
- 33 ns
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 643pF @ 25V
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 10 ns
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Max Dual Supply Voltage :
- 55V
- Power Dissipation-Max :
- 62W Tc
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 20A
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 28 ns
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- BUK9675-55A,118

N-Channel Tape & Reel (TR) 68m Ω @ 10A, 10V ±10V 643pF @ 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9675-55A,118 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 72 mJ.A device's maximal input capacitance is 643pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 28 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.By using 55V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
BUK9675-55A,118 Features
the avalanche energy rating (Eas) is 72 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 28 ns
BUK9675-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9675-55A,118 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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