BUK9675-100A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Packaging :

Tape and Reel (TR)

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

15V

Turn On Delay Time :

13 ns

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Rise Time :

120ns

Published :

2010

Turn-Off Delay Time :

58 ns

HTS Code :

8541.29.00.75

Drain-source On Resistance-Max :

0.084Ohm

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

99W Tc

Fall Time (Typ) :

57 ns

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1704pF @ 25V

ECCN Code :

EAR99

Max Dual Supply Voltage :

100V

Series :

Automotive, AEC-Q101, TrenchMOS™

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

72m Ω @ 10A, 10V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

100 mJ

Power Dissipation :

98W

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Terminations :

2

Continuous Drain Current (ID) :

23A

Number of Elements :

1

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Surface Mount :

yes

Vgs (Max) :

±15V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

91A