BUK966R5-60E,118
- Mfr.Part #
- BUK966R5-60E,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A D2PAK
- Stock
- 9,313
- In Stock :
- 9,313
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Number of Terminations :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Lead Free :
- Lead Free
- Published :
- 2015
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- Avalanche Energy Rating (Eas) :
- 196 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Terminal Position :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 5.9m Ω @ 25A, 10V
- Rise Time :
- 75ns
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Turn-Off Delay Time :
- 59 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0065ohm
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 5V
- Turn On Delay Time :
- 32 ns
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 75A
- Gate to Source Voltage (Vgs) :
- 10V
- Vgs (Max) :
- ±10V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 452A
- Fall Time (Typ) :
- 59 ns
- Power Dissipation-Max :
- 182W Tc
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- BUK966R5-60E,118

N-Channel Tape & Reel (TR) 5.9m Ω @ 25A, 10V ±10V 6900pF @ 25V 48nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK966R5-60E,118 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 196 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6900pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 75A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 59 ns.Peak drain current is 452A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 32 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.In addition to 60V, it supports dual voltages up to the maximum.Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
BUK966R5-60E,118 Features
the avalanche energy rating (Eas) is 196 mJ
a continuous drain current (ID) of 75A
the turn-off delay time is 59 ns
based on its rated peak drain current 452A.
BUK966R5-60E,118 Applications
There are a lot of Nexperia USA Inc.
BUK966R5-60E,118 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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