BUK964R8-60E,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

234W Tc

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Published :

2014

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

10V

Turn-Off Delay Time :

78 ns

Rise Time :

73ns

Max Dual Supply Voltage :

60V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

9710pF @ 25V

Continuous Drain Current (ID) :

100A

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 25A, 10V

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

5V

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101, TrenchMOS™

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

596A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

68 ns

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Pins :

3

Vgs (Max) :

±10V

Transistor Element Material :

SILICON

Pin Count :

3

Reach Compliance Code :

not_compliant

Turn On Delay Time :

36 ns

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 5V

Drain-source On Resistance-Max :

0.0048Ohm

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

12 Weeks

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.1V @ 1mA