BUK964R2-55B,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Pulsed Drain Current-Max (IDM) :

765A

Power Dissipation :

300W

Vgs (Max) :

±15V

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

178 ns

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 25A, 10V

Drain to Source Breakdown Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

10220pF @ 25V

Terminal Form :

Gull wing

Max Dual Supply Voltage :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 5V

Continuous Drain Current (ID) :

191A

Rise Time :

232ns

Mounting Type :

Surface Mount

Turn On Delay Time :

63 ns

Radiation Hardening :

No

Number of Terminations :

2

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

273 ns

Pin Count :

3

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

15V

Drain Current-Max (Abs) (ID) :

75A

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Lead Free :

Lead Free

Series :

Automotive, AEC-Q101, TrenchMOS™

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0044Ohm

JESD-609 Code :

e3

Power Dissipation-Max :

300W Tc

HTS Code :

8541.29.00.75

Avalanche Energy Rating (Eas) :

1200 mJ

Element Configuration :

Single