BUK963R3-60E,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

158 ns

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Pin Count :

3

Fall Time (Typ) :

109 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V

Published :

2014

Drain to Source Breakdown Voltage :

60V

Additional Feature :

AVALANCHE RATED

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Number of Pins :

3

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

404 mJ

Power Dissipation :

293W

Input Capacitance (Ciss) (Max) @ Vds :

13490pF @ 25V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn On Delay Time :

54 ns

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Continuous Drain Current (ID) :

120A

Power Dissipation-Max :

293W Tc

Gate to Source Voltage (Vgs) :

10V

Max Dual Supply Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

100ns

Number of Elements :

1

Factory Lead Time :

12 Weeks

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 10V