BUK9637-100E,118
- Mfr.Part #
- BUK9637-100E,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 31A D2PAK
- Stock
- 19,800
- In Stock :
- 19,800
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 10A, 10V
- Mounting Type :
- Surface Mount
- Color :
- Black
- Gate to Source Voltage (Vgs) :
- 15V
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 33.7 ns
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 14.8 ns
- Power Dissipation-Max :
- 96W Tc
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 44 mJ
- Wire Gauge (Max) :
- 28 AWG
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Plating :
- Gold
- Continuous Drain Current (ID) :
- 31A
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 22.8nC @ 5V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Number of Channels :
- 1
- Fall Time (Typ) :
- 35.1 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2681pF @ 25V
- Published :
- 2016
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 15.875mm
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Termination :
- Crimp
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Material :
- Brass, Metal
- Diameter :
- 12.7mm
- Number of Terminations :
- 2
- Wire Gauge (Min) :
- 24 AWG
- Vgs (Max) :
- ±10V
- Element Configuration :
- Single
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Max Dual Supply Voltage :
- 100V
- Drain to Source Breakdown Voltage :
- 100V
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- Gull wing
- Rise Time :
- 44.1ns
- Datasheets
- BUK9637-100E,118

N-Channel Tape & Reel (TR) 36m Ω @ 10A, 10V ±10V 2681pF @ 25V 22.8nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9637-100E,118 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 44 mJ.A device's maximal input capacitance is 2681pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 31A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 33.7 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.By using 100V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (5V 10V).
BUK9637-100E,118 Features
the avalanche energy rating (Eas) is 44 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 33.7 ns
BUK9637-100E,118 Applications
There are a lot of Nexperia USA Inc.
BUK9637-100E,118 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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